FDMQ8403 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Substantial efficiency benefit in PD so.

Description

* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Substantial efficiency benefit in PD solutions
* RoHS Compliant This quad MOSFET solution provides ten-fold improvement in power dissip.

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